Direct graphene synthesis on SiO2/Si substrate by ion implantation
文献类型：期刊论文
| 作者 | Zhang, R; Wang, ZS; Zhang, ZD; Dai, ZG; Wang, LL; Li, H; Zhou, L; Shang, YX; He, J; Fu, DJ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 102期号:19页码:193102 |
| 英文摘要 | We present results of few-layer graphene synthesis directly on SiO2/Si substrate by negative carbon ion implantation in Ni catalyst films on the top of SiO2/Si substrate. Negative carbon ions at 20 keV were implanted into Ni films with doses of (4-16) x 10(15) cm(-2). The implanted carbon atoms dissolved in Ni at an elevated temperature and diffused towards both sides of the Ni film. After annealing, graphene layers were observed on top of the Ni surface and on SiO2 beneath the Ni film. Formation of graphene layers directly on insulating substrates was achieved by etching the top Ni layer. (C) 2013 AIP Publishing LLC. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000320440800081 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/224669]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, R,Wang, ZS,Zhang, ZD,et al. Direct graphene synthesis on SiO2/Si substrate by ion implantation[J]. APPLIED PHYSICS LETTERS,2013,102(19):193102. |
| APA | Zhang, R.,Wang, ZS.,Zhang, ZD.,Dai, ZG.,Wang, LL.,...&Liu, JR；何俊.(2013).Direct graphene synthesis on SiO2/Si substrate by ion implantation.APPLIED PHYSICS LETTERS,102(19),193102. |
| MLA | Zhang, R,et al."Direct graphene synthesis on SiO2/Si substrate by ion implantation".APPLIED PHYSICS LETTERS 102.19(2013):193102. |
入库方式： OAI收割
来源：高能物理研究所
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