Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor
文献类型：期刊论文
| 作者 | 赵梅;Zhao, M; Liu, L; Liang, RR; Wang, J; Xu, J |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2014 |
| 卷号 | 53期号:4页码:41301 |
| 英文摘要 | The electrical properties of a Ge/HfO2 MOS capacitor with an ultrathin GeSnON interlayer were investigated. A high-quality GeSnON interlayer was formed by annealing a thin GeSn layer in NH3 ambient at 400 degrees C. The GeSn layer was fabricated by a unique processing method: a Sn layer was deposited on Ge substrates using a magnetron sputtering system, and then the top Sn layer was removed using diluted HCl solution, leaving an approximately 1-nm-thick GeSn layer. Through this method, the nitridation of the Ge/HfO2 interface was achieved at low temperature. The electrical measurement results showed that improved capacitance-voltage and leakage current density characteristics were obtained for the Ge/GeSnON/HfO2 MOS capacitor, with a reduction of interface trap density to 4.6 x 10(11) cm(-2)eV(-1). These results indicate effective passivation of the Ge/HfO2 interface with the implementation of the GeSnON interlayer formed by this original technique. (C) 2014 The Japan Society of Applied Physics |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000336118600009 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/225049]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 推荐引用方式 GB/T 7714 | 赵梅；Zhao, M,Liu, L,Liang, RR,et al. Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53(4):41301. |
| APA | 赵梅；Zhao, M,Liu, L,Liang, RR,Wang, J,&Xu, J.(2014).Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor.JAPANESE JOURNAL OF APPLIED PHYSICS,53(4),41301. |
| MLA | 赵梅；Zhao, M,et al."Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor".JAPANESE JOURNAL OF APPLIED PHYSICS 53.4(2014):41301. |
入库方式： OAI收割
来源：高能物理研究所
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