Valence band photoemission behavior of Pr1-xSrxMnO3
文献类型：期刊论文
| 作者 | Kui RX(奎热西) ; Liu FQ(刘凤琴); Qian HJ(钱海杰); Guo L(郭林); Xian DC(冼鼎昌); Ibrahim, K; Liu, FQ; Qian, HJ; Guo, L; Xian, DC
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| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
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| 出版日期 | 2000 |
| 卷号 | 76期号:1页码:#REF! |
| 关键词 | valence band photoemission Fermi level |
| 通讯作者 | Ibrahim, K (reprint author), Chinese Acad Sci, Inst High Energy Phys, Synchrotron Radiat Lab, Beijing 100039, Peoples R China. |
| 英文摘要 | Valence band photoemission experiments on Pr1-xSrxMnO3 polycrystalline system with x ranging from 0.0 to 0.4 show that the density of states of the bands appearing in the ranges between Fermi level and similar to 12 eV below Fermi level have a substantial change with the doping level x. These features are discussed in terms of charge transfer in the ground states of Pr1-xSrxMnO3 system. A nonlinear charge transfer with the doping amount x is evidenced and a possible second order phase transition mediated by the charge transfer is proposed. (C) 2000 Elsevier Science S.A. All rights reserved. |
| 学科主题 | Materials Science; Physics |
| 类目[WOS] | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 收录类别 | SCI |
| WOS记录号 | WOS:000087378700005 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/225501]  |
| 专题 | 高能物理研究所_院士 |
| 推荐引用方式 GB/T 7714 | Kui RX,Liu FQ,Qian HJ,et al. Valence band photoemission behavior of Pr1-xSrxMnO3[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2000,76(1):#REF!. |
| APA | 奎热西.,刘凤琴.,钱海杰.,郭林.,冼鼎昌.,...&Wu, SC.(2000).Valence band photoemission behavior of Pr1-xSrxMnO3.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,76(1),#REF!. |
| MLA | 奎热西,et al."Valence band photoemission behavior of Pr1-xSrxMnO3".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 76.1(2000):#REF!. |
入库方式： OAI收割
来源：高能物理研究所
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