Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations
文献类型：期刊论文
| 作者 | Yang H(杨辉) ; Xu K(徐科); Bian LF(边历峰); Gong XJ(弓晓晶)
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| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2014-08 |
| 卷号 | 53期号:8 |
| 关键词 | BEAM EPITAXY NANOWHISKERS NUCLEATION SI(111 FILM |
| 通讯作者 | 弓晓晶 |
| 英文摘要 | The effect of the flux ratio of N atoms to Ga atoms on the radial/axial growth of GaN nanowires during molecular-beam epitaxy has been investigated by molecular dynamics simulations. By studying adatoms on a surface during the growth of GaN nanowires, we explore the underlying mechanisms and find that both a preferable adsorption surface for N and Ga adatoms and the desorption of N adatoms play a key role for such axial/radial growth. These observations on the atomic scale are crucial for understanding the self-induced growth of GaN nanowires in general as well as for achieving their desired morphology under different growth conditions. (C) 2014 The Japan Society of Applied Physics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000341479100019 |
| 公开日期 | 2014-12-02 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1632]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Yang H,Xu K,Bian LF,et al. Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53(8). |
| APA | Yang H,Xu K,Bian LF,&Gong XJ.(2014).Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations.JAPANESE JOURNAL OF APPLIED PHYSICS,53(8). |
| MLA | Yang H,et al."Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations".JAPANESE JOURNAL OF APPLIED PHYSICS 53.8(2014). |
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