Time delay in InGaN multiple quantum well laser diodes at room temperature
文献类型：期刊论文
| 作者 | Jin LA(季莲) ; Yang H (杨辉); Zhang ZM (张书明)
|
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2010-12 |
| 卷号 | 19期号:12 |
| 关键词 | InGaN laser diode delay effect saturable absorber traps |
| 通讯作者 | Jin LA(季莲) |
| 合作状况 | 其它 |
| 英文摘要 | This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increases further. Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire. It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. The traps can be bleached by capturing injected carriers. The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000285151400041 |
| 公开日期 | 2011-03-13 |
| 源URL | [http://58.210.77.100/handle/332007/354]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 通讯作者 | Jin LA(季莲) |
| 推荐引用方式 GB/T 7714 | Jin LA,Yang H ,Zhang ZM . Time delay in InGaN multiple quantum well laser diodes at room temperature[J]. Chinese Physics B,2010,19(12). |
| APA | Jin LA,Yang H ,&Zhang ZM .(2010).Time delay in InGaN multiple quantum well laser diodes at room temperature.Chinese Physics B,19(12). |
| MLA | Jin LA,et al."Time delay in InGaN multiple quantum well laser diodes at room temperature".Chinese Physics B 19.12(2010). |
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