Photoluminescence and Raman studies on Ge-based complexes in Sidoped GaInP epilayers grown on Germanium
文献类型：期刊论文
| 作者 | J. R. Dong(董建荣) ; S. L. Lu*(陆书龙); H. Yang(杨辉); S. L. Lu*(陆书龙)
|
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2012-07 |
| 卷号 | 112期号:2页码:023509 - 023509- |
| 通讯作者 | S. L. Lu*(陆书龙) |
| 英文摘要 | Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge(Ga,In)-V(Ga,In)] complexes. A strong evidence to support the existence of [Ge(Ga,In)-Si(Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge(Ga,In)-V(Ga,In)] and [Ge(Ga,In)-Si(Ga,In)] complexes. |
| 语种 | 英语 |
| 公开日期 | 2013-01-16 |
| 源URL | [http://58.210.77.100/handle/332007/896]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 通讯作者 | S. L. Lu*(陆书龙); S. L. Lu*(陆书龙) |
| 推荐引用方式 GB/T 7714 | J. R. Dong,S. L. Lu*,H. Yang,et al. Photoluminescence and Raman studies on Ge-based complexes in Sidoped GaInP epilayers grown on Germanium[J]. Journal of Applied Physics,2012,112(2):023509 - 023509-. |
| APA | J. R. Dong,S. L. Lu*,H. Yang,&S. L. Lu*.(2012).Photoluminescence and Raman studies on Ge-based complexes in Sidoped GaInP epilayers grown on Germanium.Journal of Applied Physics,112(2),023509 - 023509-. |
| MLA | J. R. Dong,et al."Photoluminescence and Raman studies on Ge-based complexes in Sidoped GaInP epilayers grown on Germanium".Journal of Applied Physics 112.2(2012):023509 - 023509-. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。