Exciton and Carrier Spin Relaxations in InGaAs Lattice-matched to Ge Substrates
文献类型：期刊论文
| 作者 | Jianrong Dong(董建荣) ; Shulong Lu(陆书龙)
|
| 刊名 | Appl. Phys. Lett.
 |
| 出版日期 | 2012-06-18 |
| 卷号 | 100期号:25页码:252414 |
| 通讯作者 | Atsushi Tackeuchi |
| 英文摘要 | We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D’yakonov-Perel’ process is dominant. The longest observed spin relaxation time of 2.6 ns at 77K is explained by the decrease in the spatial overlap of electrons and holes. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-01-16 |
| 源URL | [http://58.210.77.100/handle/332007/923]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 推荐引用方式 GB/T 7714 | Jianrong Dong,Shulong Lu. Exciton and Carrier Spin Relaxations in InGaAs Lattice-matched to Ge Substrates[J]. Appl. Phys. Lett.,2012,100(25):252414. |
| APA | Jianrong Dong,&Shulong Lu.(2012).Exciton and Carrier Spin Relaxations in InGaAs Lattice-matched to Ge Substrates.Appl. Phys. Lett.,100(25),252414. |
| MLA | Jianrong Dong,et al."Exciton and Carrier Spin Relaxations in InGaAs Lattice-matched to Ge Substrates".Appl. Phys. Lett. 100.25(2012):252414. |
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