0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers
文献类型：期刊论文
| 作者 | Lu, SL(陆书龙) ; Zhao, YM(赵勇明); Dong, JR(董建荣); Ji, L(季莲)
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:2 |
| 关键词 | In0.69Ga0.39As thermophotovoltaic devices thermophotovoltaic devices |
| 通讯作者 | Lu, SL(陆书龙) |
| 英文摘要 | Single-junction, lattice-mismatched In0.69Ga0.31As thermophotovoltaic (TPV) devices each with abandgap of 0.6 eV are grown on InP substrate by metal—organic chemical vapour deposition (MOCVD). Compositionally undulating step-graded InAsyP1−y buffer layers with a lattice mismatch of ~1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate. With an optimized buffer thickness, the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion. High-performance single-junction devices are demonstrated, with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2, which are measured underthe standard solar simulator of air mass 1.5-global (AM 1.5 G) |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000315347100060 |
| 公开日期 | 2014-01-08 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1257]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 通讯作者 | Lu, SL(陆书龙) |
| 推荐引用方式 GB/T 7714 | Lu, SL,Zhao, YM,Dong, JR,et al. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers[J]. CHINESE PHYSICS B,2013,22(2). |
| APA | Lu, SL,Zhao, YM,Dong, JR,&Ji, L.(2013).0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers.CHINESE PHYSICS B,22(2). |
| MLA | Lu, SL,et al."0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers".CHINESE PHYSICS B 22.2(2013). |
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