Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Ji, L(季莲) ; Zhao, YM(赵勇明); Yang, H(杨辉); Dong, JR(董建荣); Lu, SL(陆书龙)
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| 刊名 | JOURNAL OF CRYSTAL GROWTH
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| 出版日期 | 2013-01-15 |
| 卷号 | 363期号:0页码:44-48 |
| 关键词 | Organometallic vapor phase epitaxy |
| 通讯作者 | Lu, SL(陆书龙) |
| 英文摘要 | Compositionally undulating step-graded InAsyP1−y buffer layers were grown by metal-organic chemical vapor deposition (MOCVD) to relax the strain of In0.68Ga0.32As with InP substrate. The strain relaxation and surface morphology are strongly dependent on the thickness of each step-graded buffer layer. With an optimized buffer thickness design, a 3-μm-thick In0.68Ga0.32As epilayer shows a high crystal quality with no measurable tetragonal distortion and a very low surface roughness of 2.74 nm was obtained. Transmission Electron Microscopy (TEM) measurement revealed a threading dislocation density on the order of or below ∼106 cm−2. Our results indicate that the compositionally undulating step-graded InAsyP1−y buffers grown on InP are very promising to be virtual substrates of infrared and high speed metamorphic devices. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000313205400007 |
| 公开日期 | 2014-01-09 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1272]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 通讯作者 | Lu, SL(陆书龙) |
| 推荐引用方式 GB/T 7714 | Ji, L,Zhao, YM,Yang, H,et al. Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2013,363(0):44-48. |
| APA | Ji, L,Zhao, YM,Yang, H,Dong, JR,&Lu, SL.(2013).Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,363(0),44-48. |
| MLA | Ji, L,et al."Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 363.0(2013):44-48. |
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