High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN
文献类型：期刊论文
| 作者 | Yang, H(杨辉) ; Wang, JF(王建峰)
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2013-04 |
| 卷号 | 62期号:8 |
| 关键词 | InGaN epilayer plasma-assisted molecular beam epitaxy indium incorporation crystalline quality |
| 通讯作者 | Zheng, XH(郑新和) |
| 英文摘要 | Growth behaviors of InxGa1-xN (x <= 0.2) materials by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated in detail. A precise control of the incorporation of indium into InxGa1-xN at a growth temperature of 580 degrees C is realized. The In019Ga0.81N shows a very narrow width of 587 arcsec for the (10.2) asymmetrical reflection from high-resolution X-ray diffraction and the background electronic concentration is 3.96 x 10(18) cm(3). In the region of metal-rich growth, no negligible indium incorporation is observed even if the Ga beam flux is much larger than the equivalent N flux. This growth behavior might be ascribed to an incomplete Ga incorporation during InGaN growth. In addition, a slight increase of In flux results in crystalline quality degradation of InGaN epilayers. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000319506400054 |
| 公开日期 | 2014-01-13 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1312]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Yang, H,Wang, JF. High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN[J]. ACTA PHYSICA SINICA,2013,62(8). |
| APA | Yang, H,&Wang, JF.(2013).High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN.ACTA PHYSICA SINICA,62(8). |
| MLA | Yang, H,et al."High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN".ACTA PHYSICA SINICA 62.8(2013). |
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