Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells
文献类型：期刊论文
| 作者 | Bian LF(边历峰) ; Yang H(杨辉); Lu SL(陆书龙); Ji L(季莲)
|
| 刊名 | SOLAR ENERGY MATERIALS AND SOLAR CELLS
 |
| 出版日期 | 2014-08 |
| 卷号 | 127期号:0页码:1-5 |
| 关键词 | InGaAsP Molecular beam epitaxy Solar cell Carrier recombination dynamics |
| 通讯作者 | 陆书龙 |
| 英文摘要 | The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra. (C) 2014 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000338618000001 |
| 公开日期 | 2014-12-02 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1637]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Bian LF,Yang H,Lu SL,et al. Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2014,127(0):1-5. |
| APA | Bian LF,Yang H,Lu SL,&Ji L.(2014).Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,127(0),1-5. |
| MLA | Bian LF,et al."Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 127.0(2014):1-5. |
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