中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Picosecond spin relaxation in low-temperature-grown GaAs

文献类型:期刊论文

作者Lu, SL (陆书龙)
刊名APPLIED PHYSICS LETTERS
出版日期2014
卷号104期号:12
关键词ELECTRONS RADIATION BAND
通讯作者Tackeuchi, A (Tackeuchi, A.)
英文摘要The spin relaxation process of low-temperature-grown GaAs is investigated by spin-dependent pump and probe reflectance measurements with a sub-picosecond time resolution. Two very short carrier lifetimes of 2.0 ps and 28 ps, which can be attributed to nonradiative recombinations related to defects, are observed at 10 K. The observed spin polarization shows double exponential decay with spin relaxation times of 46.2 ps (8.0 ps) and 509 ps (60 ps) at 10K (200 K). The observed picosecond spin relaxation, which is considerably shorter than that of conventional GaAs, indicates the strong relevance of the Elliott-Yafet process as the spin relaxation mechanism. For the first (second) spin relaxation component, the temperature and carrier density dependences of the spin relaxation time indicate that the Bir-Aronov-Pikus process is also effective at temperatures between 10K and 77 K, and that the D'yakonov-Perel' process is effective between 125K (77 K) and 200 K. (C) 2014 AIP Publishing LLC.
收录类别SCI
语种英语
WOS记录号WOS:000334078500042
公开日期2015-02-03
源URL[http://ir.sinano.ac.cn/handle/332007/1762]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式
GB/T 7714
Lu, SL . Picosecond spin relaxation in low-temperature-grown GaAs[J]. APPLIED PHYSICS LETTERS,2014,104(12).
APA Lu, SL .(2014).Picosecond spin relaxation in low-temperature-grown GaAs.APPLIED PHYSICS LETTERS,104(12).
MLA Lu, SL ."Picosecond spin relaxation in low-temperature-grown GaAs".APPLIED PHYSICS LETTERS 104.12(2014).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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