Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Yang, H (杨辉) ; Lu, SL (陆书龙)
|
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 2014 |
| 卷号 | 200期号:0页码:9-13 |
| 关键词 | Semiconductor Molecular beam epitaxy Solar cell Transport and optical properties Temperature dependent I-V measurement |
| 通讯作者 | Lu, SL (陆书龙) |
| 英文摘要 | The transport properties of carriers in GaInP solar cells grown by molecular beam epitaxy are investigated by temperature-dependent current-voltage (I-V) measurements. In contrast to GaInP/AlGaInP heterostructure, a long PL decay time is observed in GaInP/AlInP, which is ascribed to a lower interface recombination due to an improved carriers' confinement in the case of the high-energy barrier. However, the series resistance induced by the high potential barrier at GaInP/AlInP interface due to a big valence band offset prevents the improvement of solar cell's performance. An S-shape like I-V characteristic observed at low temperatures indicates that the transport of major carriers is limited by the barrier. A calculation based on the combination of a normal photovoltaic device with a barrier-affected thermal carriers transport explicitly explains this abnormal I-V characteristic. Our study demonstrates the critical role of the barrier induced series resistance in the determination of solar cell's performance. (C) 2014 Elsevier Ltd. All rights reserved |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000344228900003 |
| 公开日期 | 2015-02-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1835]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 通讯作者 | Lu, SL (陆书龙) |
| 推荐引用方式 GB/T 7714 | Yang, H ,Lu, SL . Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy[J]. SOLID STATE COMMUNICATIONS,2014,200(0):9-13. |
| APA | Yang, H ,&Lu, SL .(2014).Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy.SOLID STATE COMMUNICATIONS,200(0),9-13. |
| MLA | Yang, H ,et al."Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy".SOLID STATE COMMUNICATIONS 200.0(2014):9-13. |
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