Room-temperature GaAs/InP wafer bonding with extremely low resistance
文献类型：期刊论文
| 作者 | Ji, L (季莲) ; Yang, H (杨辉); Lu, SL (陆书龙)
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| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2014 |
| 卷号 | 7期号:11 |
| 关键词 | CONCENTRATOR SOLAR-CELLS |
| 通讯作者 | Uchida, S (Uchida, Shiro) |
| 英文摘要 | Low-temperature direct wafer bonding is a promising technique for fabricating multijunction solar cells with more than four junctions in order to obtain high conversion efficiencies. However, it has been difficult to reduce the bond interface resistance between a GaAs-based subcell wafer and an InP-based subcell wafer. We found that a novel bonding structure comprising heavily Zn-doped (1 x 10(19) cm(-3)) p(+)-GaAs and S-doped (3 x 10(18)cm(-3)) n-InP had an interface resistance of 2.5 x 10(-5) Omega.cm(2), which is the lowest value ever reported. This result suggests that the newly developed room-temperature wafer bonding technique has high potential to realize high-efficiency multijunction solar cells. (C) 2014 The Japan Society of Applied Physics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000346119500020 |
| 公开日期 | 2015-02-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1846]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Ji, L ,Yang, H ,Lu, SL . Room-temperature GaAs/InP wafer bonding with extremely low resistance[J]. APPLIED PHYSICS EXPRESS,2014,7(11). |
| APA | Ji, L ,Yang, H ,&Lu, SL .(2014).Room-temperature GaAs/InP wafer bonding with extremely low resistance.APPLIED PHYSICS EXPRESS,7(11). |
| MLA | Ji, L ,et al."Room-temperature GaAs/InP wafer bonding with extremely low resistance".APPLIED PHYSICS EXPRESS 7.11(2014). |
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