Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement
文献类型:期刊论文
作者 | Harasawa, R; Yamamoto, N; Wu, H(吴昊); Aritake, T; Lu, SL(陆书龙); Ji, L(季莲); Tackeuchi, A |
刊名 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
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出版日期 | 2015 |
卷号 | 252期号:6页码:4 |
关键词 | InGaAsP semiconductors spin relaxation spintronics |
通讯作者 | Tackeuchi, A |
英文摘要 | We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300K. We have observed the electron spin relaxation times of 980ps at 10K and 95ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30K. At 100-300K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
收录类别 | SCI |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/3368] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
推荐引用方式 GB/T 7714 | Harasawa, R,Yamamoto, N,Wu, H,et al. Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2015,252(6):4. |
APA | Harasawa, R.,Yamamoto, N.,Wu, H.,Aritake, T.,Lu, SL.,...&Tackeuchi, A.(2015).Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,252(6),4. |
MLA | Harasawa, R,et al."Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252.6(2015):4. |
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