Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy
文献类型：期刊论文
| 作者 | Ji, L(季莲); Tan, M(谭明); Honda, K; Harasawa, R; Yasue, Y; Wu, YY(吴渊渊); Dai, P(代盼); Tackeuchi, A; Bian, LF(边历峰) ; Lu, SL(陆书龙)
|
| 刊名 | SOLAR ENERGY MATERIALS AND SOLAR CELLS
 |
| 出版日期 | 2015 |
| 卷号 | 137页码:5 |
| 关键词 | InGaAsP Molecular beam epitaxy Solar cell Quantum efficiency Carrier recombination dynamics |
| 通讯作者 | Lu, SL (陆书龙) |
| 英文摘要 | We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.45P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.42As indicates that InP is more promising as the back surface field for future solar cell performance improvements. (C) 2015 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3372]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Ji, L,Tan, M,Honda, K,et al. Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2015,137:5. |
| APA | Ji, L.,Tan, M.,Honda, K.,Harasawa, R.,Yasue, Y.,...&Yang, H.(2015).Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy.SOLAR ENERGY MATERIALS AND SOLAR CELLS,137,5. |
| MLA | Ji, L,et al."Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy".SOLAR ENERGY MATERIALS AND SOLAR CELLS 137(2015):5. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。