GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy
文献类型：期刊论文
| 作者 | Lu, JY(卢建娅); Zheng, XH(郑新河); Wang, NM(王乃明); Chen, X(陈曦); Li, BJ(李宝吉); Lu, SL(陆书龙); Yang, H(杨辉)
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| 刊名 | CHINESE PHYSICS LETTERS
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| 出版日期 | 2015 |
| 卷号 | 32期号:5页码:4 |
| 通讯作者 | Zheng, XH (郑新河) |
| 英文摘要 | We demonstrate nearly 1 eV GaN0.03As0.97/In0.09Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a photoluminescence (PL) at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As superlattice solar cells show a reasonably-high short-circuit current density (J(sc)) of over 10 mA/cm(2). Furthermore, a concentration behavior is measured, which shows a linear relationship between J(sc) and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3384]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Lu, JY,Zheng, XH,Wang, NM,et al. GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy[J]. CHINESE PHYSICS LETTERS,2015,32(5):4. |
| APA | Lu, JY.,Zheng, XH.,Wang, NM.,Chen, X.,Li, BJ.,...&Yang, H.(2015).GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy.CHINESE PHYSICS LETTERS,32(5),4. |
| MLA | Lu, JY,et al."GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy".CHINESE PHYSICS LETTERS 32.5(2015):4. |
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