Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Dai, P(代盼); Tan, M(谭明); Wu, YY(吴渊源); Ji, L(季莲); Bian, LF(边历峰) ; Lu, SL(陆书龙); Yang, H(杨辉)
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| 刊名 | JOURNAL OF CRYSTAL GROWTH
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| 出版日期 | 2015 |
| 卷号 | 413页码:5 |
| 关键词 | Doping Molecular beam epitaxy Solar cell |
| 通讯作者 | Lu, SL (陆书龙) |
| 英文摘要 | Solid-state tellurium (Te) is used as an n-type dopant of AllnP grown by molecular beam epitaxy (MBE). The carrier concentration proportionally increases with increasing Te beam equivalent pressure (BEP) up to a high doping density of 1 x 10(19) cm(-3). The incorporation of Te into AllnP results in a mirror-like surface at a moderate doping density due to its surfactant effect, while the surface roughness increased with a further rising of Te doping concentration. Furthermore, for the same In and Al flux ratio, the increase of the Te flux leads to a decreased In-content, but little effect on the alloy's disorder is observed. The highly Tv-doped AllnP was used in a GaAs solar cell as a window layer. As compared with the solar cell with the Si-doped AllnP window layer, the device with the Te-doped AllnP window layer exhibits the higher efficiency and an extended increase under concentrated solar illumination, due to the benefits of the higher doping density in the Te-doped epilayer. (C) 2014 Elsevier B.V. All rights reserved |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3422]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Dai, P,Tan, M,Wu, YY,et al. Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2015,413:5. |
| APA | Dai, P.,Tan, M.,Wu, YY.,Ji, L.,Bian, LF.,...&Yang, H.(2015).Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,413,5. |
| MLA | Dai, P,et al."Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 413(2015):5. |
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