Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes
文献类型：期刊论文
| 作者 | Dong JR(董建荣)
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009-02-02 |
| 卷号 | 94期号:5 |
| 关键词 | avalanche photodiodes III-V semiconductors indium compounds photoconductivity semiconductor quantum dots |
| 通讯作者 | Chia CK |
| 合作状况 | 其它 |
| 英文摘要 | Polarization resolved photocurrents in InAs/InP quantum dot (QD) avalanche photodiodes (APDs) comprising of three InAs QD layers have been determined under normal incidence. The responsivity of the InAs/InP APD from 1550 nm illumination was found to increase rapidly with increasing avalanche gain. Energy separation between the heavy-hole ground-state (hh1-e1) and heavy-hole excited-state (hh2-e2) absorptions was found to increase linearly with increasing applied electric field. The difference between the photocurrents corresponds to the hh1-e1 and hh2-e2 transitions, which increases exponentially after the onset of multiplication, suggesting the TE and TM polarization effects on the photoresponse of the InAs/InP APDs are amplified by the avalanche multiplication process. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000263167000085 |
| 公开日期 | 2010-01-15 |
| 源URL | [http://58.210.77.100/handle/332007/151]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 推荐引用方式 GB/T 7714 | Dong JR. Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes[J]. APPLIED PHYSICS LETTERS,2009,94(5). |
| APA | Dong JR.(2009).Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes.APPLIED PHYSICS LETTERS,94(5). |
| MLA | Dong JR."Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes".APPLIED PHYSICS LETTERS 94.5(2009). |
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