Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates
文献类型：期刊论文
| 作者 | Yang, H(杨辉) ; Zhao, YM(赵勇明); Yu, SZ(于淑珍); Dong, JR(董建荣)
|
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2014 |
| 卷号 | 288期号:0页码:482-487 |
| 关键词 | Metamorphic buffer Strain relaxation Si doping Dislocation multiplication Phase separation |
| 通讯作者 | Dong, JR(董建荣) |
| 英文摘要 | We investigate the effects of Si doping on the strain relaxation of the compositionally step-graded (Al)GaInP buffers grown by metal-organic chemical vapor deposition on (0 0 1) GaAs substrates with different miscuts toward (1 1 1)A. It is found that in the 2° samples, high Si doping can reduce both the α and β dislocation densities by delaying and suppressing the formation of phase separation in the buffer. In contrast, in the 7° samples, Si dopants deteriorate the buffer quality through increasing the dislocation density accompanying with the tilt reduction along the [1 1 0] direction, and a striking feature, bunches of β dislocations away from the interfaces, is observed in the [1 1 0] cross-sectional transmission electron microscopy images. A cross-slip mechanism closely associated with the pinning effect of Si on α dislocation motion is proposed to explain the multiplication of β dislocations. These results indicate that selecting a moderate Si doping density and substrate miscut are critical for the design and fabrication of metamorphic optoelectronic devices. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000327493400064 |
| 公开日期 | 2014-01-13 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1325]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 通讯作者 | Dong, JR(董建荣) |
| 推荐引用方式 GB/T 7714 | Yang, H,Zhao, YM,Yu, SZ,et al. Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates[J]. APPLIED SURFACE SCIENCE,2014,288(0):482-487. |
| APA | Yang, H,Zhao, YM,Yu, SZ,&Dong, JR.(2014).Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates.APPLIED SURFACE SCIENCE,288(0),482-487. |
| MLA | Yang, H,et al."Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates".APPLIED SURFACE SCIENCE 288.0(2014):482-487. |
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