中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers

文献类型:期刊论文

作者Li, KL; Sun, YR; Dong, JR(董建荣); Zhao, YM; Yu, SZ; Zhao, CY; Zeng, XL; Yang, H(杨辉)
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2013-10-01
卷号380期号:0页码:261-267
关键词Stresses X-ray diffraction Metal-organic chemical vapor deposition Semiconductor III-V materials
通讯作者Dong, JR(董建荣)
英文摘要The effects of miscut toward (111)A of (001) GaAs substrates on α dislocation glide in compositionally step-graded (Al)GaInP buffers grown by metal-organic chemical vapor deposition have been investigated. The full width at half maximum of X-ray rocking curves and the tilt obtained from symmetric (004) reciprocal space mappings suggest that the average misfit glide length of α dislocations is longer in samples on 15° off substrates than that on 7° off substrates. Compared to the 7° sample, the larger miscut 15° more significantly weakens the blocking effect of the β dislocations on the motion of α dislocations, and it also provides a much stronger driving force on α dislocations in (111) slip planes, which greatly enhances the misfit dislocation glide. Eventually, the two effects collectively lead to a longer average misfit glide length of α dislocations and a lower threading dislocation density in the active layer on the 15° off substrates, which is critical for improving the performances of devices based on lattice mismatched materials.
收录类别SCI ; EI
语种英语
WOS记录号WOS:000324042000044
公开日期2014-01-13
源URL[http://ir.sinano.ac.cn/handle/332007/1321]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队
推荐引用方式
GB/T 7714
Li, KL,Sun, YR,Dong, JR,et al. Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers[J]. JOURNAL OF CRYSTAL GROWTH,2013,380(0):261-267.
APA Li, KL.,Sun, YR.,Dong, JR.,Zhao, YM.,Yu, SZ.,...&Yang, H.(2013).Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers.JOURNAL OF CRYSTAL GROWTH,380(0),261-267.
MLA Li, KL,et al."Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers".JOURNAL OF CRYSTAL GROWTH 380.0(2013):261-267.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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