Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers
文献类型:期刊论文
作者 | Li, KL; Sun, YR; Dong, JR(董建荣)![]() ![]() ![]() |
刊名 | JOURNAL OF CRYSTAL GROWTH
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出版日期 | 2013-10-01 |
卷号 | 380期号:0页码:261-267 |
关键词 | Stresses X-ray diffraction Metal-organic chemical vapor deposition Semiconductor III-V materials |
通讯作者 | Dong, JR(董建荣) |
英文摘要 | The effects of miscut toward (111)A of (001) GaAs substrates on α dislocation glide in compositionally step-graded (Al)GaInP buffers grown by metal-organic chemical vapor deposition have been investigated. The full width at half maximum of X-ray rocking curves and the tilt obtained from symmetric (004) reciprocal space mappings suggest that the average misfit glide length of α dislocations is longer in samples on 15° off substrates than that on 7° off substrates. Compared to the 7° sample, the larger miscut 15° more significantly weakens the blocking effect of the β dislocations on the motion of α dislocations, and it also provides a much stronger driving force on α dislocations in (111) slip planes, which greatly enhances the misfit dislocation glide. Eventually, the two effects collectively lead to a longer average misfit glide length of α dislocations and a lower threading dislocation density in the active layer on the 15° off substrates, which is critical for improving the performances of devices based on lattice mismatched materials. |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000324042000044 |
公开日期 | 2014-01-13 |
源URL | [http://ir.sinano.ac.cn/handle/332007/1321] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
推荐引用方式 GB/T 7714 | Li, KL,Sun, YR,Dong, JR,et al. Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers[J]. JOURNAL OF CRYSTAL GROWTH,2013,380(0):261-267. |
APA | Li, KL.,Sun, YR.,Dong, JR.,Zhao, YM.,Yu, SZ.,...&Yang, H.(2013).Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers.JOURNAL OF CRYSTAL GROWTH,380(0),261-267. |
MLA | Li, KL,et al."Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers".JOURNAL OF CRYSTAL GROWTH 380.0(2013):261-267. |
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