Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate
文献类型：期刊论文
| 作者 | Yu, SZ(于淑珍) ; Yang, H(杨辉); Dong, JR(董建荣); Zhao, YM(赵勇明)
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| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2013-10-15 |
| 卷号 | 381期号:0页码:70-76 |
| 关键词 | Atomic force microscopy Stresses Metalorganic chemical vapor deposition Semiconductor III-V materials |
| 通讯作者 | Dong, JR(董建荣) |
| 英文摘要 | We have investigated the effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on a GaAs substrate by metal organic chemical vapor deposition (MOCVD). The AlInAs layers grown at 700 °C show a much better crystalline quality than the ones grown at 675 °C, because a high temperature can suppress phase separation and enhance the glide velocity of dislocations during the strain relaxation process. Compared with the miscuts of 2° and 7°, the 15° miscut is more effective in suppressing phase separation during the growth of the AlInAs buffers. Theoretical calculations show that the miscut will facilitate the strain relaxation by dislocation gliding. These results indicate that a high growth temperature and a large miscut will improve the quality of the metamorphic AlInAs layers grown on the GaAs substrate by MOCVD. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 公开日期 | 2014-01-13 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1317]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 通讯作者 | Dong, JR(董建荣) |
| 推荐引用方式 GB/T 7714 | Yu, SZ,Yang, H,Dong, JR,et al. Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate[J]. JOURNAL OF CRYSTAL GROWTH,2013,381(0):70-76. |
| APA | Yu, SZ,Yang, H,Dong, JR,&Zhao, YM.(2013).Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate.JOURNAL OF CRYSTAL GROWTH,381(0),70-76. |
| MLA | Yu, SZ,et al."Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate".JOURNAL OF CRYSTAL GROWTH 381.0(2013):70-76. |
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