Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers
文献类型：期刊论文
| 作者 | Yang, H (杨辉) ; Yu, SZ (于淑珍); Dong, JR (董建荣); Zhao, YM (赵勇明)
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| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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| 出版日期 | 2014-01 |
| 卷号 | 25期号:1页码:581-585 |
| 关键词 | SURFACE-MORPHOLOGY STRAIN RELAXATION GAAS |
| 通讯作者 | Dong, JR (董建荣) |
| 英文摘要 | Metamorphic GaInAs/AlInAs buffers with a total mismatch of 2 % with respect to GaAs have been grown by metal organic chemical vapor deposition on GaAs substrates with miscuts of 2A degrees, 7A degrees and 15A degrees toward (111)A. The buffer grown on 2A degrees miscut substrate exhibits a dislocation pile-up formation which increases the threading dislocation density greatly. However, using 7A degrees and 15A degrees off substrates eliminates the dislocation pile-up and decreases the dislocation density by an order of magnitude compared with that on the 2A degrees substrate miscut, and the best crystalline quality of buffer is obtained on the 15A degrees substrate miscut. Experimental results show that the buffers grown on the 7A degrees and 15A degrees miscut substrate exhibit shallower trenches on the surface and a weaker strain field in the InGaAs cap layers, and these help to suppress the occurrence of dislocation pile-up, leading to a lower threading dislocation density. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000329233600080 |
| 公开日期 | 2014-12-01 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1606]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 通讯作者 | Dong, JR (董建荣) |
| 推荐引用方式 GB/T 7714 | Yang, H ,Yu, SZ ,Dong, JR ,et al. Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(1):581-585. |
| APA | Yang, H ,Yu, SZ ,Dong, JR ,&Zhao, YM .(2014).Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,25(1),581-585. |
| MLA | Yang, H ,et al."Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 25.1(2014):581-585. |
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