Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates
文献类型：期刊论文
| 作者 | Li, KL(李奎龙); Sun, YR(孙玉润); Dong, JR(董建荣); He, Y(何洋); Zeng, XL(曾徐路); Zhao, YM(赵勇明); Yu, SZ(于淑珍); Zhao, CY(赵春雨) |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2015 |
| 卷号 | 593页码:5 |
| 关键词 | Metamorphic GaInP buffers Threading dislocations X-ray diffraction Strain relaxation Dislocation annihilation |
| 通讯作者 | Li, KL |
| 英文摘要 | High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 x 10(6) cm(-2) and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga-1 (-) xInxP (x = 0.48-0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. (C) 2015 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3285]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 推荐引用方式 GB/T 7714 | Li, KL,Sun, YR,Dong, JR,et al. Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates[J]. THIN SOLID FILMS,2015,593:5. |
| APA | Li, KL.,Sun, YR.,Dong, JR.,He, Y.,Zeng, XL.,...&Zhao, CY.(2015).Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates.THIN SOLID FILMS,593,5. |
| MLA | Li, KL,et al."Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates".THIN SOLID FILMS 593(2015):5. |
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