Effects of leakage current on the short circuit current in the dual-junction solar cells
文献类型：期刊论文
| 作者 | Sun, YR(孙玉润); Li, KL(李奎龙); Dong, JR(董建荣); Zeng, XL(曾徐路); Yu, SZ(于淑珍); Zhao, YM(赵勇明); Zhao, CY(赵春雨); Yang, H（杨辉）
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| 刊名 | OPTICAL AND QUANTUM ELECTRONICS
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| 出版日期 | 2015 |
| 卷号 | 47期号:2页码:8 |
| 关键词 | Solar cell Leakage current Current mismatch Semiconductor III-V materials Photoelectronic device |
| 通讯作者 | Dong, JR (董建荣) |
| 英文摘要 | The characteristics of short circuit current (I in dual-junction GaInP/GaAs solar cells have been investigated, and the experimental results show that the photo current of GaInP top cell is higher than that of GaAs bottom cell and the I of the device is usually not limited by GaAs bottom cell if a leakage current occurs. The current versus voltage (I-V) curves of the solar cell were simulated with subcells based on single diode model and the I shows a dependence on the leaky subcells, i.e., the I is between the photo current of GaAs and that of GaInP subcells in the case of a leaky GaAs subcell, it is equal to the photo current of GaAs subcell in the case of a leaky GaInP subcell, and it is lower than the photo current of GaInP subcell when both GaAs and GaInP subcells are leaky. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3440]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 推荐引用方式 GB/T 7714 | Sun, YR,Li, KL,Dong, JR,et al. Effects of leakage current on the short circuit current in the dual-junction solar cells[J]. OPTICAL AND QUANTUM ELECTRONICS,2015,47(2):8. |
| APA | Sun, YR.,Li, KL.,Dong, JR.,Zeng, XL.,Yu, SZ.,...&Yang, H.(2015).Effects of leakage current on the short circuit current in the dual-junction solar cells.OPTICAL AND QUANTUM ELECTRONICS,47(2),8. |
| MLA | Sun, YR,et al."Effects of leakage current on the short circuit current in the dual-junction solar cells".OPTICAL AND QUANTUM ELECTRONICS 47.2(2015):8. |
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