Temperature-related exciton features on the Ga/N-Faces of a free-standing HVPE GaN
文献类型：期刊论文
| 作者 | Jiang, CP (蒋春萍.) ; Xu, K (徐科.)
|
| 刊名 | OPTICAL MATERIALS EXPRESS
 |
| 出版日期 | 2014 |
| 卷号 | 4期号:3页码:553-558 |
| 关键词 | VAPOR-PHASE EPITAXY LUMINESCENCE |
| 通讯作者 | Jiang, CP (蒋春萍.) |
| 英文摘要 | An apparently different effect of excitonic luminescence has been observed on the Ga-/N-faces of a free-standing HVPE GaN. The neutral donor-bound exciton (D-2(0) X) emission of the N-face is only dominant at lower temperature as compared with that of the Ga-face. Moreover, the temperature-related ratio of the peak intensity of D-2(0) X to X-A(n=1) (a free exciton) is found to be about 2.8, which is in coincidence with the ratio of the average dislocation density of the N-face to the Ga-face confirmed by Cathodoluminiscence images. These details could provide useful information for the design of GaN-based and related devices. (C) 2014 Optical Society of America |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000332670200014 |
| 公开日期 | 2015-02-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1819]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_蒋春萍团队 |
| 通讯作者 | Jiang, CP (蒋春萍.) |
| 推荐引用方式 GB/T 7714 | Jiang, CP ,Xu, K . Temperature-related exciton features on the Ga/N-Faces of a free-standing HVPE GaN[J]. OPTICAL MATERIALS EXPRESS,2014,4(3):553-558. |
| APA | Jiang, CP ,&Xu, K .(2014).Temperature-related exciton features on the Ga/N-Faces of a free-standing HVPE GaN.OPTICAL MATERIALS EXPRESS,4(3),553-558. |
| MLA | Jiang, CP ,et al."Temperature-related exciton features on the Ga/N-Faces of a free-standing HVPE GaN".OPTICAL MATERIALS EXPRESS 4.3(2014):553-558. |
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