中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

文献类型:期刊论文

作者Fan YM (范亚明); Wang HB (王怀兵)
刊名Chinese Physics B
出版日期2010-11
卷号19期号:11
关键词GaN (11-22)-plane strain optical anisotropy
通讯作者Hao GD (郝国栋)
合作状况其它
英文摘要We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode
收录类别SCI ; EI
语种英语
WOS记录号WOS:000284973100085
公开日期2010-12-30
源URL[http://58.210.77.100/handle/332007/275]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_离职团队
推荐引用方式
GB/T 7714
Fan YM ,Wang HB . Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films[J]. Chinese Physics B,2010,19(11).
APA Fan YM ,&Wang HB .(2010).Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films.Chinese Physics B,19(11).
MLA Fan YM ,et al."Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films".Chinese Physics B 19.11(2010).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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