Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
文献类型:期刊论文
作者 | Zhang SM![]() ![]() |
刊名 | Applied Physics Letters
![]() |
出版日期 | 2009-07-27 |
卷号 | 95期号:4 |
关键词 | edge dislocations gallium compounds III-V semiconductors impurities photoluminescence semiconductor doping semiconductor thin films silicon wide band gap semiconductors X-ray diffraction |
通讯作者 | Zhao DG |
合作状况 | 其它 |
英文摘要 | A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (I-BL/I-YL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the I-BL/I-YL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence. |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000268611900016 |
公开日期 | 2010-01-15 |
源URL | [http://58.210.77.100/handle/332007/124] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
推荐引用方式 GB/T 7714 | Zhang SM,Yang H. Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films[J]. Applied Physics Letters,2009,95(4). |
APA | Zhang SM,&Yang H.(2009).Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films.Applied Physics Letters,95(4). |
MLA | Zhang SM,et al."Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films".Applied Physics Letters 95.4(2009). |
入库方式: OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。