Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
文献类型：期刊论文
| 作者 | Zhang SM ; Yang H(杨辉)
|
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2009-07-27 |
| 卷号 | 95期号:4 |
| 关键词 | edge dislocations gallium compounds III-V semiconductors impurities photoluminescence semiconductor doping semiconductor thin films silicon wide band gap semiconductors X-ray diffraction |
| 通讯作者 | Zhao DG |
| 合作状况 | 其它 |
| 英文摘要 | A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (I-BL/I-YL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the I-BL/I-YL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000268611900016 |
| 公开日期 | 2010-01-15 |
| 源URL | [http://58.210.77.100/handle/332007/124]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang SM,Yang H. Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films[J]. Applied Physics Letters,2009,95(4). |
| APA | Zhang SM,&Yang H.(2009).Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films.Applied Physics Letters,95(4). |
| MLA | Zhang SM,et al."Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films".Applied Physics Letters 95.4(2009). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。