中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

文献类型:期刊论文

作者Zhang SM; Yang H(杨辉)
刊名Applied Physics Letters
出版日期2009-07-27
卷号95期号:4
关键词edge dislocations gallium compounds III-V semiconductors impurities photoluminescence semiconductor doping semiconductor thin films silicon wide band gap semiconductors X-ray diffraction
通讯作者Zhao DG
合作状况其它
英文摘要A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (I-BL/I-YL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the I-BL/I-YL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.
收录类别SCI ; EI
语种英语
WOS记录号WOS:000268611900016
公开日期2010-01-15
源URL[http://58.210.77.100/handle/332007/124]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Zhang SM,Yang H. Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films[J]. Applied Physics Letters,2009,95(4).
APA Zhang SM,&Yang H.(2009).Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films.Applied Physics Letters,95(4).
MLA Zhang SM,et al."Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films".Applied Physics Letters 95.4(2009).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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