InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
文献类型：期刊论文
| 作者 | Yang H(杨辉) ; Zhang SM
|
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2009-10 |
| 卷号 | 26期号:10 |
| 通讯作者 | Wang H |
| 合作状况 | 其它 |
| 英文摘要 | Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600 850 C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750 C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In(0.1)Ga(0.9)N/i-In(0.1)Ga(0.9)N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400 nm. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000270303200044 |
| 公开日期 | 2010-01-15 |
| 源URL | [http://58.210.77.100/handle/332007/133]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang H,Zhang SM. InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer[J]. CHINESE PHYSICS LETTERS,2009,26(10). |
| APA | Yang H,&Zhang SM.(2009).InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer.CHINESE PHYSICS LETTERS,26(10). |
| MLA | Yang H,et al."InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer".CHINESE PHYSICS LETTERS 26.10(2009). |
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