Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films
文献类型：期刊论文
| 作者 | Zhang SM ; Yang H(杨辉)
|
| 刊名 | Semiconductor Science and Technology
 |
| 出版日期 | 2009-07 |
| 卷号 | 24期号:7 |
| 通讯作者 | Wang H |
| 合作状况 | 其它 |
| 英文摘要 | In this work, the influences of CCl4 on the metalorganic chemical vapor deposition (MOCVD) growth of InN were studied for the first time. It was found that the addition of CCl4 can effectively suppress the formation of metal indium (In) droplets during InN growth, which was ascribed to the etching effect of Cl to In. However, with increasing of CCl4 flow, the InN growth rate decreased but the lateral growth of InN islands was enhanced. This provides a possibility of promoting islands coalescence toward a smooth surface of the InN film by MOCVD. The influence of addition of CCl4 on the electrical properties was also investigated. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000267402800005 |
| 公开日期 | 2010-01-15 |
| 源URL | [http://58.210.77.100/handle/332007/134]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang SM,Yang H. Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films[J]. Semiconductor Science and Technology,2009,24(7). |
| APA | Zhang SM,&Yang H.(2009).Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films.Semiconductor Science and Technology,24(7). |
| MLA | Zhang SM,et al."Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films".Semiconductor Science and Technology 24.7(2009). |
入库方式： OAI收割
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