Enhanced performance of p-GaN by Mg delta doping
文献类型：期刊论文
| 作者 | Zhang SM ; Liu JP; Wang HB（王怀兵）
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| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2007-06-01 |
| 卷号 | 304期号:1页码:7-10 |
| 关键词 | delta doping dislocation density hole concentration LED GaN MOCVD |
| 通讯作者 | Wang HB |
| 合作状况 | 其它 |
| 英文摘要 | The electrical and structural properties of Mg delta-doped GaN epilayers grown by MOCVD were investigated. Compared to uniform Mg-doping GaN layers, it has been shown that the delta-doping (delta-doping) process could suppress the dislocation density and enhance the p-type performance. The influence of pre-purge step on the structural properties of GaN was also investigated. The hole concentration of p-GaN decreases when using a pre-purge step. These results can be explained convincingly using a simple model of impurity incorporation under Ga-free growth condition. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000247231900003 |
| 公开日期 | 2010-01-15 |
| 源URL | [http://58.210.77.100/handle/332007/168]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang SM,Liu JP,Wang HB. Enhanced performance of p-GaN by Mg delta doping[J]. JOURNAL OF CRYSTAL GROWTH,2007,304(1):7-10. |
| APA | Zhang SM,Liu JP,&Wang HB.(2007).Enhanced performance of p-GaN by Mg delta doping.JOURNAL OF CRYSTAL GROWTH,304(1),7-10. |
| MLA | Zhang SM,et al."Enhanced performance of p-GaN by Mg delta doping".JOURNAL OF CRYSTAL GROWTH 304.1(2007):7-10. |
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