Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
文献类型：期刊论文
| 作者 | Yang H (杨辉) ; Zhang SM; Xu K (徐科); Qiu YX (邱永鑫)
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2010-07 |
| 期号 | 7 |
| 关键词 | in-plane grazing incidence x-ray diffraction gallium nitride mosaic structure biaxial strain |
| 通讯作者 | Guo, X |
| 合作状况 | 其它 |
| 英文摘要 | This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000280186500075 |
| 公开日期 | 2010-12-30 |
| 源URL | [http://58.210.77.100/handle/332007/269]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang H ,Zhang SM,Xu K ,et al. Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction[J]. CHINESE PHYSICS B,2010(7). |
| APA | Yang H ,Zhang SM,Xu K ,&Qiu YX .(2010).Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction.CHINESE PHYSICS B(7). |
| MLA | Yang H ,et al."Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction".CHINESE PHYSICS B .7(2010). |
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