Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
文献类型：期刊论文
| 作者 | Zhang SM ; Yang H (杨辉)
|
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2010-03-04 |
| 期号 | 1-2 |
| 关键词 | Nitride materials Photoconductivity and photovoltaics Computer simulations |
| 通讯作者 | Zhao, DG |
| 合作状况 | 其它 |
| 英文摘要 | A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000276018900075 |
| 公开日期 | 2010-12-31 |
| 源URL | [http://58.210.77.100/handle/332007/285]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang SM,Yang H . Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector[J]. Journal of Alloys and Compounds,2010(1-2). |
| APA | Zhang SM,&Yang H .(2010).Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector.Journal of Alloys and Compounds(1-2). |
| MLA | Zhang SM,et al."Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector".Journal of Alloys and Compounds .1-2(2010). |
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