Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhang SM (张书明) ; Yang H (杨辉)
|
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2011-01-21 |
| 卷号 | 509期号:3页码:748-750 |
| 关键词 | Nitride materials Crystal growth Composition fluctuations X-ray diffraction |
| 通讯作者 | Zhao, DG |
| 合作状况 | 其它 |
| 英文摘要 | The growth rate and its relationship with growth conditions of AlGaN alloy films by metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that both parasitic reaction and competitive adsorption play important roles in determining the growth rate and Al incorporation in AlGaN. Low reactor pressure can weaken parasitic reactions, thus increasing the Al composition. In addition, a decrease of absolute amount of Ga atoms arriving on the substrate may lead to a lower Ga competitive power, and then a higher Al content in AlGaN film. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000285318400036 |
| 公开日期 | 2011-03-11 |
| 源URL | [http://58.210.77.100/handle/332007/318]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang SM ,Yang H . Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition[J]. Journal of Alloys and Compounds,2011,509(3):748-750. |
| APA | Zhang SM ,&Yang H .(2011).Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition.Journal of Alloys and Compounds,509(3),748-750. |
| MLA | Zhang SM ,et al."Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition".Journal of Alloys and Compounds 509.3(2011):748-750. |
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