Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours
文献类型:期刊论文
作者 | Wang HB (王怀兵)![]() ![]() ![]() ![]() |
刊名 | Chinese Physics Letters
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出版日期 | 2010-11 |
卷号 | 27期号:11 |
通讯作者 | Zeng C (曾畅) |
合作状况 | 其它 |
英文摘要 | We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000283725100036 |
公开日期 | 2011-03-13 |
源URL | [http://58.210.77.100/handle/332007/343] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
推荐引用方式 GB/T 7714 | Wang HB ,Yang H ,Zhang SM ,et al. Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours[J]. Chinese Physics Letters,2010,27(11). |
APA | Wang HB ,Yang H ,Zhang SM ,&Ji L.(2010).Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours.Chinese Physics Letters,27(11). |
MLA | Wang HB ,et al."Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours".Chinese Physics Letters 27.11(2010). |
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