中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

文献类型:期刊论文

作者Wang HB (王怀兵); Yang H (杨辉); Zhang SM (张书明); Ji L
刊名Chinese Physics Letters
出版日期2010-11
卷号27期号:11
通讯作者Zeng C (曾畅)
合作状况其它
英文摘要We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.
收录类别SCI
语种英语
WOS记录号WOS:000283725100036
公开日期2011-03-13
源URL[http://58.210.77.100/handle/332007/343]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Wang HB ,Yang H ,Zhang SM ,et al. Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours[J]. Chinese Physics Letters,2010,27(11).
APA Wang HB ,Yang H ,Zhang SM ,&Ji L.(2010).Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours.Chinese Physics Letters,27(11).
MLA Wang HB ,et al."Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours".Chinese Physics Letters 27.11(2010).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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