Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
文献类型：期刊论文
| 作者 | Zhang SM ; Yang H (杨辉)
|
| 刊名 | Thin Solid Films
 |
| 出版日期 | 2010-06-30 |
| 卷号 | 518期号:17页码:5028-5031 |
| 关键词 | Gallium Nitride Indium Gallium Nitride Cathodeluminescence X-ray Diffraction Metal-Organic Chemical Vapor Deposition |
| 通讯作者 | Wang H |
| 合作状况 | 其它 |
| 英文摘要 | We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000279566100048 |
| 公开日期 | 2011-03-13 |
| 源URL | [http://58.210.77.100/handle/332007/345]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang SM,Yang H . Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer[J]. Thin Solid Films,2010,518(17):5028-5031. |
| APA | Zhang SM,&Yang H .(2010).Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer.Thin Solid Films,518(17),5028-5031. |
| MLA | Zhang SM,et al."Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer".Thin Solid Films 518.17(2010):5028-5031. |
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