Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
文献类型：期刊论文
| 作者 | Yang H (杨辉) ; Zhang SM(张书明)
|
| 刊名 | Physica B-Condensed Matter
 |
| 出版日期 | 2010-08 |
| 卷号 | 405期号:22页码:4668-4672 |
| 关键词 | InGaN Dislocation Metalorganic chemical vapor deposition High resolution X-ray diffraction Cathodoluminescence |
| 通讯作者 | Wang H (王辉) |
| 合作状况 | 其它 |
| 英文摘要 | The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000284447300013 |
| 公开日期 | 2011-03-13 |
| 源URL | [http://58.210.77.100/handle/332007/346]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang H ,Zhang SM. Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties[J]. Physica B-Condensed Matter,2010,405(22):4668-4672. |
| APA | Yang H ,&Zhang SM.(2010).Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties.Physica B-Condensed Matter,405(22),4668-4672. |
| MLA | Yang H ,et al."Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties".Physica B-Condensed Matter 405.22(2010):4668-4672. |
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