GaN-based violet laser diodes grown on free-standing GaN substrate
文献类型：期刊论文
| 作者 | Zhang LQ ; Yang H (杨辉); Zhang SM
|
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2009-12 |
| 卷号 | 18期号:12页码:5350-5353 |
| 关键词 | GaN laser diode mounting configuration active region temperature |
| 通讯作者 | Yang H (杨辉) |
| 合作状况 | 其它 |
| 英文摘要 | A violet laser diode (LD) structure is grown on a free-standing c-plane GaN substrate and 4 mu m x 800 mu m ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet-coating and chip-mounting conditions are investigated under pulse mode operation. The active region temperatures of p-side up and p-side down mounted LDs are calculated with different injection currents. The calculated thermal resistances of p-side up and p-side down mounted LDs are 4.6 K/W and 3 K/W, respectively. The threshold current of the p-side down mounted LD is much lower than that of the p-side up mounted LD. The blue shift of the emission wavelength with increasing injection current is observed only for the LD with p-side down mounting configuration, due to the more efficient heat dissipation. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000273827400038 |
| 公开日期 | 2011-03-14 |
| 源URL | [http://58.210.77.100/handle/332007/372]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Yang H (杨辉) |
| 推荐引用方式 GB/T 7714 | Zhang LQ,Yang H ,Zhang SM. GaN-based violet laser diodes grown on free-standing GaN substrate[J]. Chinese Physics B,2009,18(12):5350-5353. |
| APA | Zhang LQ,Yang H ,&Zhang SM.(2009).GaN-based violet laser diodes grown on free-standing GaN substrate.Chinese Physics B,18(12),5350-5353. |
| MLA | Zhang LQ,et al."GaN-based violet laser diodes grown on free-standing GaN substrate".Chinese Physics B 18.12(2009):5350-5353. |
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