The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition
文献类型：期刊论文
| 作者 | Yang, H (杨辉) ; Zhang, BS (张宝顺); Zhang, SM (张书明)
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2011-12 |
| 卷号 | 20期号:12 |
| 关键词 | X-ray diffraction metalorganic chemical vapour deposition nitrides |
| 通讯作者 | Zhao, DG |
| 英文摘要 | In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000298493500061 |
| 公开日期 | 2012-07-25 |
| 源URL | [http://58.210.77.100/handle/332007/523]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang, H ,Zhang, BS ,Zhang, SM . The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition[J]. CHINESE PHYSICS B,2011,20(12). |
| APA | Yang, H ,Zhang, BS ,&Zhang, SM .(2011).The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition.CHINESE PHYSICS B,20(12). |
| MLA | Yang, H ,et al."The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition".CHINESE PHYSICS B 20.12(2011). |
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