The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
文献类型：期刊论文
| 作者 | Qiu YX(邱永鑫) ; Zhang SM(张书明); Yang H(杨辉)
|
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2011-05-01 |
| 卷号 | 109期号:9 |
| 关键词 | DIODES EFFICIENCY |
| 通讯作者 | 张书明 |
| 英文摘要 | The carrier distribution and recombination dynamics of InGaN/GaN multiple quantum well (MQW) light-emitting diode structure are investigated. Two emission peaks were observed in the low temperature photoluminescence spectra of an InGaN/GaN MQW structure, but only one peak was observed in the electroluminescence (EL) spectra. Combined with the spatially resolved cathodoluminescence (CL) measurements, it is found that the electrically injected carrier distribution is governed by hole transport and diffusion in InGaN/GaN MQW structure due to the much lower mobility of hole. And the electron and hole recombination of EL occurs predominantly in the QWs that are located closer to the p-GaN layer. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000290588500026 |
| 公开日期 | 2012-08-22 |
| 源URL | [http://58.210.77.100/handle/332007/539]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Qiu YX,Zhang SM,Yang H. The investigation on carrier distribution in InGaN/GaN multiple quantum well layers[J]. JOURNAL OF APPLIED PHYSICS,2011,109(9). |
| APA | Qiu YX,Zhang SM,&Yang H.(2011).The investigation on carrier distribution in InGaN/GaN multiple quantum well layers.JOURNAL OF APPLIED PHYSICS,109(9). |
| MLA | Qiu YX,et al."The investigation on carrier distribution in InGaN/GaN multiple quantum well layers".JOURNAL OF APPLIED PHYSICS 109.9(2011). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。