GaN-Based White-Light-Emitting Diodes with Low Color Temperature and High Color Rendering Index
文献类型:期刊论文
作者 | Fan, YM (范亚明)![]() ![]() ![]() ![]() |
刊名 | SPECTROSCOPY AND SPECTRAL ANALYSIS
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出版日期 | 2011-06 |
卷号 | 31期号:6页码:1446-1449 |
关键词 | White-light-emitting diode Phosphor powder Color rendering index Low color temperature PHOSPHORS |
通讯作者 | Wang, HB (王怀兵) |
英文摘要 | The luminescence properties of high color rendering white LED depending on the proportions of mixed phosphor powders were investigated by adopting green and red phosphors stimulated by a 440 nm InGaN/GaN based blue LED. The results show that when the proportion of A/B type silica gels and green/red phosphor powders is 0.5 : 0.5 : 0.2 : 0.03, two luminance bands are stimulated and their wavelength peaks are 535 and 643 nm, respectively. The minimum color temperature can reach 3 251 K, while the color rendering is as high as 88.8. Compared with the traditional white LED fabricated by yellow YAG-phosphors-coated high efficiency 460 nm blue LED, the color temperature is lower and the color rendering index can be increased by almost 26%. |
收录类别 | SCI ; EI |
语种 | 中文 |
WOS记录号 | WOS:000291227800001 |
公开日期 | 2012-08-24 |
源URL | [http://58.210.77.100/handle/332007/628] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
通讯作者 | Wang, HB (王怀兵); Wang, HB (王怀兵) |
推荐引用方式 GB/T 7714 | Fan, YM ,Wang, HB ,Liu, JP ,et al. GaN-Based White-Light-Emitting Diodes with Low Color Temperature and High Color Rendering Index[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS,2011,31(6):1446-1449. |
APA | Fan, YM ,Wang, HB ,Liu, JP ,&Wang, HB .(2011).GaN-Based White-Light-Emitting Diodes with Low Color Temperature and High Color Rendering Index.SPECTROSCOPY AND SPECTRAL ANALYSIS,31(6),1446-1449. |
MLA | Fan, YM ,et al."GaN-Based White-Light-Emitting Diodes with Low Color Temperature and High Color Rendering Index".SPECTROSCOPY AND SPECTRAL ANALYSIS 31.6(2011):1446-1449. |
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