中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging

文献类型:期刊论文

作者Yang, H (杨辉); Zhang, SM (张书明)
刊名APPLIED PHYSICS LETTERS
出版日期2011-09-12
卷号99期号:11
关键词LIGHT-EMITTING-DIODES LASER-DIODES GAN NANOWIRES
通讯作者Zhu, JH
英文摘要

An interesting phonon mode at around 685-705 cm(-1) was clearly observed in the Raman spectra of InGaN/GaN multiple-quantum-wells nanopillars with different diameters at room temperature. The Raman peak position of this mode is found to show a distinct dependence on the nanopillar size, which is in well agreement with theoretical calculation of the surface optical (SO) phonon modes of nanopillars. Moreover, this kind of SO phonon was evidenced to be located on the pillar surface by using scanning confocal micro-Raman microscopy.

收录类别SCI ; EI
语种英语
WOS记录号WOS:000295034400068
公开日期2012-08-24
源URL[http://58.210.77.100/handle/332007/632]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Yang, H ,Zhang, SM . Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging[J]. APPLIED PHYSICS LETTERS,2011,99(11).
APA Yang, H ,&Zhang, SM .(2011).Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging.APPLIED PHYSICS LETTERS,99(11).
MLA Yang, H ,et al."Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging".APPLIED PHYSICS LETTERS 99.11(2011).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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