GaN基低色温高显色白光LED
文献类型：期刊论文
| 作者 | 范亚明 ; 王怀兵; 刘建平
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| 刊名 | 光谱学与光谱分析
 |
| 出版日期 | 2011-05-15 |
| 期号 | 6 |
| 关键词 | 白光LED 荧光粉 显色指数 低色温 |
| 中文摘要 | 采用440 nm短波长InGaN/GaN基蓝光LED芯片激发高效红、绿荧光粉制得高显色性白光LED,研究了不同胶粉配比对LED发光性能的影响,结果表明,A胶、B胶、绿粉、红粉比重在0.5:0.5:0.2:0.03时,在440 nm蓝光激发下呈现了有两个谱带组成的发光光谱,分别是峰值为535 nm的特征光谱和643nm的特征光谱,胶粉通过均匀调配后能够有效的进行混光产生低色温白光,实验中最低色温可达3 251 K,显色指数高达88.8,这比传统蓝光激发YAG荧光粉制得的白光LED色温更低,显色指数提高了26%。 |
| 英文摘要 | The luminescence properties of high color rendering white LED depending on the proportions of mixed phosphor powders were investigated by adopting green and red phosphors stimulated by a 440 nm InGaN/GaN based blue LED.The results show that when the proportion of A/B type silica gels and green/red phosphor powders is 0.5∶0.5∶0.2∶0.03,two luminance bands are stimulated and their wavelength peaks are 535 and 643 nm,respectively.The minimum color temperature can reach 3 251 K,while the color rendering is as high as 88.8.Compared with the traditional white LED fabricated by yellow YAG-phosphors-coated high efficiency 460 nm blue LED,the color temperature is lower and the color rendering index can be increased by almost 26%. |
| 语种 | 中文 |
| 公开日期 | 2012-09-17 |
| 源URL | [http://58.210.77.100/handle/332007/761]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | 范亚明,王怀兵,刘建平. GaN基低色温高显色白光LED[J]. 光谱学与光谱分析,2011(6). |
| APA | 范亚明,王怀兵,&刘建平.(2011).GaN基低色温高显色白光LED.光谱学与光谱分析(6). |
| MLA | 范亚明,et al."GaN基低色温高显色白光LED".光谱学与光谱分析 .6(2011). |
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