Thermal characterization of GaN-based laser diodes by forward-voltage method
文献类型：期刊论文
| 作者 | H. B. Wang（王怀兵） ; J. P. Liu（刘建平）; S. M. Zhang（张书明）; H. Yang(杨辉)
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| 刊名 | Journal of Applied Physics
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| 出版日期 | 2012-05-01 |
| 卷号 | 111期号:9页码:094513 |
| 通讯作者 | M. X. Feng（冯美鑫） |
| 英文摘要 | An expression of the relation between junction temperature and forward voltage common for both GaN-based laser diodes (LDs) and light emitting diodes is derived. By the expression, the junction temperature of GaN-based LDs emitting at 405 nm was measured at different injection current and compared with the result of micro-Raman spectroscopy, showing that the expression is reasonable. In addition, the activation energy of Mg in AlGaN/GaN superlattice layers is obtained based on the temperature dependence of forward voltage. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000304109900147 |
| 公开日期 | 2013-01-16 |
| 源URL | [http://58.210.77.100/handle/332007/915]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | H. B. Wang,J. P. Liu,S. M. Zhang,et al. Thermal characterization of GaN-based laser diodes by forward-voltage method[J]. Journal of Applied Physics,2012,111(9):094513. |
| APA | H. B. Wang,J. P. Liu,S. M. Zhang,&H. Yang.(2012).Thermal characterization of GaN-based laser diodes by forward-voltage method.Journal of Applied Physics,111(9),094513. |
| MLA | H. B. Wang,et al."Thermal characterization of GaN-based laser diodes by forward-voltage method".Journal of Applied Physics 111.9(2012):094513. |
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