Thermal analysis of GaN laser diodes in a package structure
文献类型：期刊论文
| 作者 | ShuMingZhang (张书明) ; HuaiBingWang (王怀兵); HuiYang (杨辉); JianPingLiu (刘建平)
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| 刊名 | Chinese Physics B
 |
| 出版日期 | 2012-08 |
| 卷号 | 21期号:8页码:084209 |
| 关键词 | ELECTROMAGNETISM OPTICS ACOUSTICS HEAT TRANSFER CLASSICAL MECHANICS FLUID DYNAMICS |
| 通讯作者 | MeiXinFeng (冯美鑫) |
| 英文摘要 | Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000307501600042 |
| 公开日期 | 2013-01-16 |
| 源URL | [http://58.210.77.100/handle/332007/914]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | ShuMingZhang ,HuaiBingWang ,HuiYang ,et al. Thermal analysis of GaN laser diodes in a package structure[J]. Chinese Physics B,2012,21(8):084209. |
| APA | ShuMingZhang ,HuaiBingWang ,HuiYang ,&JianPingLiu .(2012).Thermal analysis of GaN laser diodes in a package structure.Chinese Physics B,21(8),084209. |
| MLA | ShuMingZhang ,et al."Thermal analysis of GaN laser diodes in a package structure".Chinese Physics B 21.8(2012):084209. |
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