Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes
文献类型:期刊论文
作者 | HuaiBingWang (王怀兵)![]() ![]() ![]() ![]() |
刊名 | Science China Technological Sciences
![]() |
出版日期 | 2012-08 |
卷号 | 21期号:8页码:084209 |
关键词 | ELECTROMAGNETISM OPTICS ACOUSTICS HEAT TRANSFER CLASSICAL MECHANICS FLUID DYNAMICS |
通讯作者 | MeiXinFeng (冯美鑫) |
英文摘要 | Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000301595600004 |
公开日期 | 2013-01-16 |
源URL | [http://58.210.77.100/handle/332007/913] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
推荐引用方式 GB/T 7714 | HuaiBingWang ,JianPingLiu ,HuiYang ,et al. Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes[J]. Science China Technological Sciences,2012,21(8):084209. |
APA | HuaiBingWang ,JianPingLiu ,HuiYang ,&ShuMingZhang .(2012).Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes.Science China Technological Sciences,21(8),084209. |
MLA | HuaiBingWang ,et al."Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes".Science China Technological Sciences 21.8(2012):084209. |
入库方式: OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。