中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

文献类型:期刊论文

作者HuaiBingWang (王怀兵); JianPingLiu (刘建平); HuiYang (杨辉); ShuMingZhang (张书明)
刊名Science China Technological Sciences
出版日期2012-08
卷号21期号:8页码:084209
关键词ELECTROMAGNETISM OPTICS ACOUSTICS HEAT TRANSFER CLASSICAL MECHANICS FLUID DYNAMICS
通讯作者MeiXinFeng (冯美鑫)
英文摘要

Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.

收录类别SCI
语种英语
WOS记录号WOS:000301595600004
公开日期2013-01-16
源URL[http://58.210.77.100/handle/332007/913]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
HuaiBingWang ,JianPingLiu ,HuiYang ,et al. Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes[J]. Science China Technological Sciences,2012,21(8):084209.
APA HuaiBingWang ,JianPingLiu ,HuiYang ,&ShuMingZhang .(2012).Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes.Science China Technological Sciences,21(8),084209.
MLA HuaiBingWang ,et al."Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes".Science China Technological Sciences 21.8(2012):084209.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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