A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe
文献类型：期刊论文
| 作者 | Liu, JP(刘建平) ; Li, DY(李德尧); Zhang, LQ(张立群); Zhang, SM(张书明); Yang, H(杨辉); Zhang, BS(张宝顺)
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| 刊名 | CHINESE PHYSICS LETTERS
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| 出版日期 | 2013-10 |
| 卷号 | 30期号:10 |
| 通讯作者 | Zhao, DG |
| 英文摘要 | An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000326492900026 |
| 公开日期 | 2013-12-30 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1177]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Liu, JP,Li, DY,Zhang, LQ,et al. A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe[J]. CHINESE PHYSICS LETTERS,2013,30(10). |
| APA | Liu, JP,Li, DY,Zhang, LQ,Zhang, SM,Yang, H,&Zhang, BS.(2013).A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe.CHINESE PHYSICS LETTERS,30(10). |
| MLA | Liu, JP,et al."A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe".CHINESE PHYSICS LETTERS 30.10(2013). |
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