Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy
文献类型：期刊论文
| 作者 | Li, DY(李德尧) ; Zhang, SM(张书明); Liu, JP(刘建平); Zhang, LQ(张立群); Yang, H(杨辉)
|
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2013-05-15 |
| 卷号 | 371期号:0页码:7-10 |
| 关键词 | Surface structure Metalorganic vapor phase epitaxy Nitrides Semiconducting III-V materials |
| 通讯作者 | Liu, JP(刘建平) |
| 英文摘要 | Hillocks on c-plane homoepitaxial GaN epilayers were investigated. They were observed on epilayers grown on [1 (1) over bar 00] direction miscut free-standing GaN substrates with miscut angle not larger than 0.2 degrees and were absent when substrate miscut angle increased to 0.4 degrees. Atomic force microscopy (AFM) and cathodoluminescence measurements reveal a close correlation between hillocks and dislocation clusters, while hillocks are absent on layers grown on GaN substrate free of dislocation clusters. We believe that the hillocks originate from spiral growth around dislocation clusters. Larger strain induced by dislocation accumulation may be responsible for the hillock formation around dislocation clusters. (C) 2013 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000317576500002 |
| 公开日期 | 2014-01-13 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1311]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Liu, JP(刘建平) |
| 推荐引用方式 GB/T 7714 | Li, DY,Zhang, SM,Liu, JP,et al. Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2013,371(0):7-10. |
| APA | Li, DY,Zhang, SM,Liu, JP,Zhang, LQ,&Yang, H.(2013).Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy.JOURNAL OF CRYSTAL GROWTH,371(0),7-10. |
| MLA | Li, DY,et al."Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy".JOURNAL OF CRYSTAL GROWTH 371.0(2013):7-10. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。