Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth
文献类型：期刊论文
| 作者 | Yang, H(杨辉) ; Li, DY(李德尧); Zhang, SM(张书明); Wang, HB(王怀兵); Liu, JP（刘建平）; Zhang, LQ(张立群)
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| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013-10 |
| 卷号 | 103期号:15 |
| 关键词 | C-PLANE GAN HYDROGEN TREATMENT INDIUM SEGREGATION SUBSTRATE DEFECTS |
| 通讯作者 | Liu, JP（刘建平） |
| 英文摘要 | Local InGaN quantum well (QW) decomposition and resultant inhomogeneous luminescence in green laser diode (LD) epitaxial structures are investigated using micro-photoluminescence, Z-contrast scanning transmission electron microscopy, and high-resolution transmission electron microscopy. The local InGaN QW decomposition is found to happen during p-type layer growth due to too high thermal budget and may initiate at the InGaN/GaN QW upper interface probably due to the formation of In-rich InGaN clusters there. Reducing thermal budget and optimizing InGaN/GaN QW growth suppress the local InGaN QW decomposition, and green LD structures with homogeneous luminescence and bright electroluminescence (EL) intensity are obtained. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000325779700047 |
| 公开日期 | 2014-01-15 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1385]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Liu, JP（刘建平） |
| 推荐引用方式 GB/T 7714 | Yang, H,Li, DY,Zhang, SM,et al. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth[J]. APPLIED PHYSICS LETTERS,2013,103(15). |
| APA | Yang, H,Li, DY,Zhang, SM,Wang, HB,Liu, JP,&Zhang, LQ.(2013).Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth.APPLIED PHYSICS LETTERS,103(15). |
| MLA | Yang, H,et al."Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth".APPLIED PHYSICS LETTERS 103.15(2013). |
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