Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Yang H(杨辉) ; Zhang SM(张书明)
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| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2014-09 |
| 卷号 | 32期号:5 |
| 关键词 | GAN/SAPPHIRE INTERFACE ELECTRON-TRANSPORT CARBON LAYER FE |
| 通讯作者 | He, XG |
| 英文摘要 | Unintentionally doped semi-insulating GaN films possessing a low dislocation density are grown via metalorganic vapor phase epitaxy on a sapphire substrate. The obtained electrical resistivity reaches 4.8 x .a(8) Omega.cm, and the full width at half maximum of the x-ray diffraction rocking curves of the (002) and (102) planes is as low as 201.6 and 378.0 arcsec, respectively. The GaN films are grown at low pressure (LP) to introduce residual carbon and to compensate background donors. The dislocation density in these samples is significantly reduced by using a low V/III ratio in the initial epitaxial growth stage. It is also found that the resistivity of the LP-grown samples decrease when the residual carbon concentration is excessive, which is attributed to the self-compensation of carbon impurities. Therefore, the carbon concentration of LP-grown GaN should be carefully modulated to maintain its high resistivity. (C) 2014 American Vacuum Society. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000343003600009 |
| 公开日期 | 2014-12-01 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1612]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang H,Zhang SM. Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2014,32(5). |
| APA | Yang H,&Zhang SM.(2014).Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,32(5). |
| MLA | Yang H,et al."Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 32.5(2014). |
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